Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes
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概要
- 論文の詳細を見る
Schottky diodes were fabricated on n-GaN films by coating them with an organic polyaniline layer as transparent conducting electrodes. These diodes have a high Schottky barrier height (1.28 eV) and a low reverse leakage current ($2.7\times 10^{-9}$ A/cm2 at an applied bias of $-1$ V). The photovoltaic action of these diodes ($V_{\text{OC}} = 0.67$ V and external quantum efficiency ${\sim}30$%) was studied under the illumination of an Air Mass 1.5 solar simulator. The polyaniline/n-GaN Schottky contacts were found to be sensitive to shorter wavelengths, indicating their potential for use as solar cells.
- Japan Society of Applied Physicsの論文
- 2009-09-25
著者
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SUMIYA Masatomo
National Institute for Materials Science (NIMS)
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Kondo Michio
National Institute Of Advanced Industrial Science And Technology (aist)
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Matsui Takuya
National Institute Of Advanced Industrial Science And Technology (aist)
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Irokawa Yoshihiro
National Institute For Materials Science (nims)
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Sumiya Masatomo
Advanced Photovoltaics Center National Institute For Materials Science
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Sumiya Masatomo
Department Of Electrical And Electronic Engineering Shizuoka University
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Sumiya Masatomo
Department Of Electrical & Electronic Engineering Shizuoka University
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Kondo Michio
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Matsui Takuya
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Matsuki Nobuyuki
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Sumiya Masatomo
National Inst. Materials Sci. Ibaraki Jpn
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Matsuki Nobuyuki
Gifu Univ. Gifu Jpn
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Matsuki Nobuyuki
National Institute For Materials Science
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