Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-15
著者
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Fuke S
Shizuoka Univ. Hamamatsu Jpn
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ITO Takahiro
Graduate School of Electronic Science and Technology, Shizuoka University
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SUMIYA Masatomo
Department of Electrical and Electronic Engineering, Faculty of Engineering
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TAKANO Yasushi
Graduate School of Electronic Science and Technology, Shizuoka University
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OHTSUKA Kohji
Research and Development Division, Sanken Electric Co., Ltd.
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FUKE Shunro
Graduate School of Electronic Science and Technology, Shizuoka University
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Ohtsuka Kohji
Research And Development Division Sanken Electric Co. Ltd.
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Takano Yasushi
Graduate School Of Electronic Science And Technology Shizuoka University:department Of Electrical An
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Sumiya Masatomo
Advanced Photovoltaics Center National Institute For Materials Science
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Sumiya Masatomo
Department Of Electrical And Electronic Engineering Shizuoka University
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Sumiya Masatomo
Department Of Electrical & Electronic Engineering Shizuoka University
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Sumiya Masatomo
National Inst. Materials Sci. Ibaraki Jpn
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Ito Takahiro
Graduate School Of Electronic Science And Technology Shizuoka University
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- Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
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- Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers
- Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)_O3 (111) Substrate by Metalorganic Chemical Vapor Deposition
- Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes
- Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template
- Identification of a Novel Tissue-Specific Transcriptional Activator FESTA as a Protein That Interacts with the Transcription Elongation Factor S-II
- Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Reply to "Comment on 'Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes'" [Appl. Phys. Express 2 (2009) 092201]
- Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers
- Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co
- Identification of a Novel Tissue-Specific Transcriptional Activator FESTA as a Protein That Interacts with the Transcription Elongation Factor S-II