Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts

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概要

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• We have successfully investigated surface-related deep levels in n-GaN epilayers with high carrier concentrations by using transparent conductive polyaniline Schottky contacts. High quality Schottky barrier diodes fabricated showed a typical capacitance dispersion phenomenon at ${\sim}10$ kHz, which is characteristic of conductive polyaniline films with polarization capacitance and resistance components. Steady-state photocapacitance spectroscopy measurements at over this cutoff frequency revealed five photoemission states with their onsets at ${\sim}1.40$, ${\sim}1.70$, ${\sim}2.08$, ${\sim}2.64$, and ${\sim}2.90$ eV below the conduction band, being identical with the deep levels commonly observed in GaN and AlGaN/GaN. Particularly, the concentrations of the ${\sim}1.70$ and ${\sim}2.90$ eV levels were found to increase significantly with decreasing their probing depth range to the near-surface region of the n-GaN layers. Therefore, these levels are probably subject to the surface conditions of the n-GaN layers.

• 2011-01-25

著者

• Nakano Yoshitaka

  Institute Of Science And Technology Chubu University

• IROKAWA Yoshihiro

  Advanced Electronic Materials Center, National Institute for Materials Science

• Sumiya Masatomo

  Advanced Photovoltaics Center National Institute For Materials Science

• Nakano Yoshitaka

  Institute of Science and Technology Research, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan

• Matsuki Nobuyuki

  Advanced Photovoltaics Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

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