Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas
スポンサーリンク
概要
- 論文の詳細を見る
To understand the details of etching-induced damage on a GaN surface, n-GaN crystals were plasma-etched with He and N2 gases. The etched surfaces were analyzed by X-ray photoelectron spectroscopy (XPS) and soft X-ray absorption spectroscopy (XAS) methods. The composition of the surface etched with He plasma changed significantly to being Ga-rich with the N/Ga ratio nearly equaling 0.4--0.5. The ratio of the surface etched with N2 plasma was about 0.6. The shape of the near-edge X-ray absorption fine structure (NEXAFS) of the N-K edge deformed with increasing gas pressure and processing time. The deformation can be explained by the increase in the band widths of a number of peaks in the NEXAFS spectra owing to the increase in the degree of structural disorder in the crystal. The increase in band width for the surface etched with N2 plasma was larger than that for the surface etched with He plasma. The above results can be explained with the model of the elastic energy transfer ratio of He+ and N2+ ions incident on the solid surface.
- 2013-01-25
著者
-
Nakano Yoshitaka
Institute Of Science And Technology Chubu University
-
Mukai Takashi
Nichia Chemical Industries Inc.
-
Niibe Masahito
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology
-
Inaoka Takeshi
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
-
Tominaga Kikuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
-
Kotaka Takuya
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan
-
Kawakami Retsuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
関連論文
- Stress Changes and Stability of Sputter-Deposited Mo/B_4C Multilayer Films for Extreme Ultraviolet Mirrors
- Hole Compensation Mechanism of P-Type GaN Films
- Thermal Annealing Effects on P-Type Mg-Doped GaN Films
- High-Power GaN P-N Junction Blue-Light-Emitting Diodes
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
- Contrast Measurement of Reflection Masks Fabricated from Cr and Ta Absorbers for Extreme Ultraviolet Lithography
- Deep-Level Optical Spectroscopy Investigation of Degradation Phenomena in Tris(8-hydroxyquinoline) Aluminum-Based Organic Light-Emitting Diodes
- Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces
- Nonlinear behavior of decrease in reflectivity of multilayer mirrors for extreme ultraviolet lithography optics by high-flux extreme ultraviolet irradiation in various vacuum environments (Special issue: Microprocesses and nanotechnology)
- Fabrication of Aspherical Mirrors for Extreme Ultra-Violet Lithography (EUVL) Using Deposition Techniques
- A Novel Design of Three-Aspherical-Mirror Imaging Optics for Extreme Ultra-Violet Lithography
- Damage Characteristics of TiO2 Thin Film Surfaces Etched by Capacitively Coupled Radio Frequency Helium Plasmas
- Effect of Dielectric Barrier Discharge Air Plasma Treatment on TiO2 Thin Film Surfaces
- A Novel Design of Three-Aspherical-Mirror Imaging Optics for Extreme Ultra-Violet Lithography
- Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium : Semiconductors
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts
- Inhibition of Contamination of Ru-Capped Multilayer Mirrors for Extreme Ultraviolet Lithography Projection Optics by Ethanol
- New Extreme Ultraviolet Irradiation and Multilayer Evaluation System for Extreme Ultraviolet Lithography Mirror Contamination in the NewSUBARU
- Contamination Evaluation System for Extreme Ultraviolet Mirrors with the Use of Undulator Radiation
- Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage
- Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage
- Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
- Defect Evolution in Multiwalled Carbon Nanotube Films Irradiated by Ar Ions
- Thermal Durability of Diamond Like Carbon Films Containing Tungsten Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
- Annealing Effect of W Incorporated Diamond-Like Carbon Fabricated by Ga Focused Ion Beam Chemical Vapor Deposition
- Characteristics of TiO2 Thin Film Surfaces Treated by Helium and Air Dielectric Barrier Discharge Plasmas
- Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy
- Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas
- X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature
- Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas (Special Issue : Dry Process)
- X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films : Effects of Bias Voltage and Substrate Temperature