Mukai Takashi | Nichia Chemical Industries Inc.
スポンサーリンク
概要
関連著者
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Mukai Takashi
Nichia Chemical Industries Inc.
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Mukai Takashi
Nichia Corporation
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Nakamura Shuji
Nichia Chemical Industries Inc.
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Nakamura Shuji
Department Of Research And Development Nichia Chemical Industries Ltd.
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NAKAMURA Shuji
Nichia Chemical Industries, Ltd.
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SENOH Masayuki
Nichia Chemical Industries, Ltd.
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Mukai Takashi
Nichia Corp. Tokushima Jpn
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Tominaga Kikuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Kawakami Retsuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Sano M
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Mukai Takashi
Kyoto Univ. Kyoto Jpn
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Mukai Takashi
Department Of Research And Development; Nichia Chemical Industries Ltd.
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Matsushita T
Department Of Research And Development Nichia Chemical Industries Ltd
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Masui Shingo
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Niibe Masahito
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology
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Inaoka Takeshi
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Narukawa Yukio
Nichia Chemical Industries Ltd., Anan, Tokusima 774-0044, Japan
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IWASA Naruhito
Nichia Chemical Industries, Ltd.
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Mei Jin
Department Of Physics And Astronomy Arizona State University
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Iwasa Naruhito
Department Of Research And Development Nichia Chemical Industries Ltd
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Ponce Fernando
Department Of Physics And Astronomy Arizona State University
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Zohta Yasuhito
Tokyo University Of Technology Department Of Engineering Science
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Cherns David
H. H. Wills Physics Laboratory University Of Bristol
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Omiya Hiromasa
Department Of Physics And Astronomy Arizona State University
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Srinivasan Sridhar
Department Of Physics And Astronomy Arizona State University
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Liu Rong
Department Of Physics And Astronomy Arizona State University
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Kotaka Takuya
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan
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Mukai T
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Takahashi Masayoshi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Narukawa Yukio
Nichia Corporation
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Mukai Takashi
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Nakano Yoshitaka
Institute Of Science And Technology Chubu University
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MITANI Tomotsugu
Nichia Corp.
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Nakamura S
Department Of Electrical And Electronic Engineering Yamaguchi University
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Tominaga Kikuo
Faculty Of Engineering The University Of Tokushima
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Kawakami Retsuo
Faculty Of Engineering The University Of Tokushima
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Nakano Yoshitaka
Chubu Univ. Aichi Jpn
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IWASAKI Yoshitaka
Tokyo University of Agriculture and Technology
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Iwasaki Yoshitaka
Tokyo University Of Technology Department Of Engineering Science
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LIU Rong
Department of Physics and Astronomy, Arizona State University
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SRINIVASAN Sridhar
Department of Physics and Astronomy, Arizona State University
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OMIYA Hiromasa
Department of Physics and Astronomy, Arizona State University
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CHERNS David
H. H. Wills Physics Laboratory, University of Bristol
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Niibe Masahito
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Mukai Takashi
Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Mukai Takashi
Nichia Chemical Industries Ltd., Anan, Tokusima 774-0044, Japan
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Mukai Takashi
Nichia Corp., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Mukai Takashi
Nichia Corporation, Anan, Tokushima 774-0044, Japan
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Kotaka Takuya
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Kawakami Retsuo
Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
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Inaoka Takeshi
Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
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Tominaga Kikuo
Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
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Inaoka Takeshi
Faculty of Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Tominaga Kikuo
Faculty of Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Takeichi Atsushi
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Kuwahara Akinobu
Faculty of Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Mori Yuta
Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
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Konishi Masashi
Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
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MUKAI Takashi
Nichia Chemical Industries, Ltd.
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Mitani Tomotsugu
Nichia Corp., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Sasaki Akio
Osaka Electro-Communication University, Neyagawa, Osaka 572-8530, Japan
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Shibakawa Shin-ichiro
Osaka Electro-Communication University, Neyagawa, Osaka 572-8530, Japan
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Nishizuka Kohji
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Cherns David
H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
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Omiya Hiromasa
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona, U.S.A.
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Narukawa Yukio
Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Liu Rong
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona, U.S.A.
著作論文
- Hole Compensation Mechanism of P-Type GaN Films
- Thermal Annealing Effects on P-Type Mg-Doped GaN Films
- High-Power GaN P-N Junction Blue-Light-Emitting Diodes
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
- Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium : Semiconductors
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage
- Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage
- Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
- Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy
- Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas
- Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas (Special Issue : Dry Process)