Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas (Special Issue : Dry Process)
スポンサーリンク
概要
著者
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Nakano Yoshitaka
Chubu Univ. Aichi Jpn
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Mukai Takashi
Nichia Chemical Industries Inc.
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Niibe Masahito
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology
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Tominaga Kikuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Takeichi Atsushi
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Mori Yuta
Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
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Konishi Masashi
Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
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Kawakami Retsuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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