Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium : Semiconductors
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概要
- 論文の詳細を見る
Frequency (ω) dependent conductance (G) has been measured of the reverse-biased blue and green light-emitting diodes consisting of nitride semiconductors, in order to study the electronic behavior of the Mg acceptor in metalorganic chemical vapor deposition grown p-Al_<0.2>Ga_<0.8>N. Four peaks with activation energies of 14, 63, 115, and 166meV were found in the G/ω vs ω characteristics of the diodes. Although these activation energies do not correspond directly to the energy depths above the valence band edge, it is likely that they reflect the complex electronic structure of the Mg acceptor levels.
- 社団法人応用物理学会の論文
- 2001-05-01
著者
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IWASAKI Yoshitaka
Tokyo University of Agriculture and Technology
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Zohta Yasuhito
Tokyo University Of Technology Department Of Engineering Science
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Iwasaki Yoshitaka
Tokyo University Of Technology Department Of Engineering Science
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Mukai Takashi
Nichia Chemical Industries Inc.
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Nakamura Shuji
Nichia Chemical Industries Inc.
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