Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-15
著者
-
Ueno Tomo
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Ueno Tomo
Tokyo University Of Agriculture And Technology
-
Morioka Ayuka
Tokyo University Of Agriculture And Technology
-
CHIKAMURA Shingo
Tokyo University of Agriculture and Technology
-
IWASAKI Yoshitaka
Tokyo University of Agriculture and Technology
関連論文
- Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates
- Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium : Semiconductors
- Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation