Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation

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概要

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• We report on the electrical properties of germanium oxynitride and its interface with germanium prepared by nitriding the germanium oxide/germanium surface by irradiating a nitrogen plasma stream generated by an electron-cyclotron-resonance plasma source without substrate heating. Excellent leakage current characteristics were obtained for a metal–insulator–semiconductor capacitor with a gate stack consisting of a silicon nitride sputter-deposited on germanium oxynitride with an interface trap density of ${\sim}2\times 10^{11}$ cm-2$\cdot$eV-1. Moreover, the equivalent oxide thickness of the germanium oxynitride was found to be about 30% smaller than that of germanium oxide. The reported germanium oxynitride is suitable as a beneficial interlayer between high-dielectric-constant gate insulators and germanium.

• 2006-09-30

著者

• Ueno Tomo

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Fukuda Yukio

  Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292, Japan

• Fukuda Yukio

  Tokyo University Of Science

• Kato Koji

  Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan

• Ono Toshiro

  Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan

• Toyota Hiroshi

  Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan

• Nagasato Yoshitaka

  Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan

関連論文

• Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates
• Electrical Behavior of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Oxidation in Capacitance and Conductance Measurements
• Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation
• Thermal Improvement and Stability of SiN/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature
• Electrical Characterization Techniques of Dielectric Thin Films Using Metal–Insulator–Metal Structures
• Characterization of Metal Insulator Metal Electrical Properties of Electron Cyclotron Resonance Plasma Deposited Ta2O5

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