Thermal Improvement and Stability of SiN/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature
スポンサーリンク
概要
著者
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Fukuda Yukio
Tokyo University Of Science
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Ono Toshiro
Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan
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Otani Yohei
Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292, Japan
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Okamoto Hiroshi
Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Iwasaki Takuro
Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Izumi Kohei
Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Ishizaki Hiroki
Tokyo University of Science, Suwa, Chino, Nagano 391-0292, Japan
関連論文
- Electrical Behavior of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Oxidation in Capacitance and Conductance Measurements
- Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation
- Thermal Improvement and Stability of SiN/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature
- Electrical Characterization Techniques of Dielectric Thin Films Using Metal–Insulator–Metal Structures
- Characterization of Metal Insulator Metal Electrical Properties of Electron Cyclotron Resonance Plasma Deposited Ta2O5