Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy

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概要

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• The surface of an n-GaN crystal etched with an Ar, Kr, or Xe plasma was analyzed by nitrogen K near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The NEXAFS spectroscopy was carried out with the total electron yield (TEY) method in a sample current mode and the total fluorescence yield (TFY) method by measuring the amount of fluorescence using a photodiode. The shapes of the spectra of Ar plasma-etched samples obtained by the TEY method became smooth (blunt) with increasing Ar pressure from 10 to 200 mTorr. However, those obtained by the TFY method did not change with pressure. These results indicate that the etching damage was restricted in the shallow region of less than a few nm from the surface. A change in the NEXAFS spectral shape of Kr or Xe plasma-etched samples was not observed even when measured by the TEY method. This result indicates that the surface damage in Kr or Xe plasma-etched samples was less pronounced than that in Ar plasma-etched samples.

• 2012-01-25

著者

• Mukai Takashi

  Nichia Chemical Industries Inc.

• Niibe Masahito

  Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology

• Niibe Masahito

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan

• Mukai Takashi

  Nichia Corporation, Anan, Tokushima 774-0044, Japan

• Kotaka Takuya

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan

• Kawakami Retsuo

  Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan

• Inaoka Takeshi

  Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan

• Tominaga Kikuo

  Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan

• Inaoka Takeshi

  Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan

• Tominaga Kikuo

  Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan

• Kotaka Takuya

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan

• Kawakami Retsuo

  Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan

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