High-Power and High-Efficiency P-GaAlAs/N-GaAs:Si Single-Heterostructure Infrared Emitting Diodes
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概要
- 論文の詳細を見る
P-GaAlAs/N-GaAs:Si single-heterostructure infrared emitting diodes (SH-IREDs) whose emission can be confined only to the n-GaAs layer have been developed. The external efficiency and the output power are increased more than 70%, the interface of p-n junction becomes much smoother, and the number of thyrister characteristics of SH-IREDs becomes smaller in comparison with those of conventional P-GaAs/N-GaAs:Si homostructure infrared emitting diodes (HOMO-IREDs).
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Takagi H
Murata Mfg. Co. Ltd. Kyoto Jpn
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Takagi H
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Takagi Hironori
Nichia Chemical Industries Ltd.
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Nakamura Shuji
Nichia Chemical Industries Inc.
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Nakamura Shuji
Nichia Chemical Industries Ltd.
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