InGaAsP Laser on GaAs Fabricated by the Surface Activated Wafer Direct Bonding Method at Room Temperature
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Takagi Hideki
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Suga T
Research Center For Advanced Science And Technology University Of Tokyo
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Takagi H
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Takagi H
Murata Manufacturing Co. Ltd. Kyoto Jpn
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Chung Taekryong
The University Of Tokyo Rcast
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HOSODA Naoe
Research Center for Advanced Science and Technology, University of Tokyo
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CHUNG TaekRyong
University of Tokyo, RCAST
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HOSODA Naoe
University of Tokyo, RCAST
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SUGA Tadatomo
University of Tokyo, RCAST
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Hosoda Naoe
Research Center For Advanced Science And Technology University Of Tokyo
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Suga Tadatomo
University Of Tokyo Department Of Precision Engineering School Of Engineering
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SUGA Tadatomo
University of Tokyo
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