InGaAsP Laser on GaAs Fabricated by the Surface Activated Wafer Direct Bonding Method at Room Temperature

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Takagi Hideki

  Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio

• Suga T

  Research Center For Advanced Science And Technology University Of Tokyo

• Takagi H

  Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio

• Takagi H

  Murata Manufacturing Co. Ltd. Kyoto Jpn

• Chung Taekryong

  The University Of Tokyo Rcast

• HOSODA Naoe

  Research Center for Advanced Science and Technology, University of Tokyo

• CHUNG TaekRyong

  University of Tokyo, RCAST

• HOSODA Naoe

  University of Tokyo, RCAST

• SUGA Tadatomo

  University of Tokyo, RCAST

• Hosoda Naoe

  Research Center For Advanced Science And Technology University Of Tokyo

• Suga Tadatomo

  University Of Tokyo Department Of Precision Engineering School Of Engineering

• SUGA Tadatomo

  University of Tokyo

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