Chung Taekryong | The University Of Tokyo Rcast
スポンサーリンク
概要
関連著者
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Takagi Hideki
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Suga T
Research Center For Advanced Science And Technology University Of Tokyo
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Takagi H
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Takagi H
Murata Manufacturing Co. Ltd. Kyoto Jpn
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Chung Taekryong
The University Of Tokyo Rcast
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HOSODA Naoe
Research Center for Advanced Science and Technology, University of Tokyo
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Hosoda Naoe
Research Center For Advanced Science And Technology University Of Tokyo
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HOSODA Naoe
University of Tokyo, RCAST
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SUGA Tadatomo
University of Tokyo, RCAST
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Suga Tadatomo
University Of Tokyo Department Of Precision Engineering School Of Engineering
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SUGA Tadatomo
University of Tokyo
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Suga Tadatomo
Research Center For Advanced Science And Technology University Of Tokyo
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Suga Tadatomo
The Univ. Of Tokyo Dept. Of Precision Eng. School Of Eng.
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Maeda R
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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MAEDA Ryutaro
Mechanical Engineering Laboratory, Agency of Industrial Science and Technology, Ministry of Internat
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CHUNG Teak
Research Center for Advanced Science and Technology, University of Tokyo
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HOSODA Naoe
The University of Tokyo, RCAST
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CHUNG TaekRyong
University of Tokyo, RCAST
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CHUNG Taek
University of Tokyo, RCAST
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YANG Liu
University of Tokyo, RCAST
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Hosoda Naoe
Research Center For Advanced Science And Technology The University Of Tokyo
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Suga Tadatomo
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Maeda Ryutaro
Mechanical Engineering Laboratory
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Maeda Ryutaro
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Yang Liu
University Of Tokyo Rcast
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Chung Taek
The University of Tokyo, RCAST
著作論文
- Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation
- InGaAsP Lasers on GaAs Fabricated by the Surface Activated Wafer Direct Bonding Method at Room Temperature
- InGaAsP Laser on GaAs Fabricated by the Surface Activated Wafer Direct Bonding Method at Room Temperature
- Water Direct Bonding at Room Temperature by Means of the Surface Activated Bonding