InGaAsP Lasers on GaAs Fabricated by the Surface Activated Wafer Direct Bonding Method at Room Temperature
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Takagi Hideki
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Suga T
Research Center For Advanced Science And Technology University Of Tokyo
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Suga Tadatomo
The Univ. Of Tokyo Dept. Of Precision Eng. School Of Eng.
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Takagi H
Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Takagi H
Murata Manufacturing Co. Ltd. Kyoto Jpn
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Chung Taekryong
The University Of Tokyo Rcast
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HOSODA Naoe
Research Center for Advanced Science and Technology, University of Tokyo
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HOSODA Naoe
The University of Tokyo, RCAST
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Hosoda Naoe
Research Center For Advanced Science And Technology University Of Tokyo
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Chung Taek
The University of Tokyo, RCAST
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