Modified Diffusion Bonding of Chemical Mechanical Polishing Cu at 150 °C at Ambient Pressure

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概要

• 論文の詳細を見る

• This paper describes the feasibility of a low-temperature bonding process for Cu thin films in ambient air. After Cu thin film surfaces were bombarded by an Ar fast atom beam in vacuum to remove the initial thick adsorbate, dry O2 gas was introduced into the vacuum chamber to prevent moisture-induced generation of thick Cu(OH)2 including water molecules. Then the surfaces were contacted with each other at atmospheric pressure. Upon heating at 150 °C for 600 s, high bonding strength, which was as high as that of Cu film breakage, was obtained through a CuO interfacial layer of around 10 nm thickness.

• Japan Society of Applied Physicsの論文
• 2009-05-25

著者

• Suga Tadatomo

  The Univ. Of Tokyo Dept. Of Precision Eng. School Of Eng.

• Suga Tadatomo

  The University Of Tokyo

• Shigetou Akitsu

  National Institute For Materials Science (nims)

• Shigetou Akitsu

  The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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• Modified Diffusion Bonding of Chemical Mechanical Polishing Cu at 150 °C at Ambient Pressure

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