Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-10-01
著者
-
Nakamura Shuji
Department Of Research And Development Nichia Chemical Industries Ltd.
-
Sano M
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
-
Mukai Takashi
Kyoto Univ. Kyoto Jpn
-
Mukai Takashi
Nichia Corporation
-
Mukai Takashi
Department Of Research And Development; Nichia Chemical Industries Ltd.
-
NAKAMURA Shuji
Nichia Chemical Industries, Ltd.
-
SENOH Masayuki
Nichia Chemical Industries, Ltd.
-
Mukai Takashi
Nichia Corp. Tokushima Jpn
-
Matsushita T
Department Of Research And Development Nichia Chemical Industries Ltd
-
Mukai Takashi
Nichia Chemical Industries Inc.
-
Nakamura Shuji
Nichia Chemical Industries Inc.
-
Masui Shingo
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
関連論文
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Constructing a Cactus for Minimum Cuts of a Graph in ★(mn+n^2logn) Time and ★(m) Space (Special Issue on Selected Papers from LA Symposium)
- Classification of Corkscrew Collaterals in Thromboangiitis Obliterans (Buerger's Disease) : Relationship Between Corkscrew Type and Prevalence of Ischemic Ulcers
- Relationship between Augmentation Index and Flow-Mediated Vasodilation in the Brachial Artery
- PE-503 Relationship between the Number of Circulating Endothelial Progenitor Cells and Medical History of Cardiovascular Diseases(Atherosclerosis, clinical(08)(IHD),Poster Session(English),The 72nd Annual Scientific Meeting of the Japanese Circulation Soc
- PE-160 Smoking Abolishes Ischemic Preconditioning-induced Augmentation of Endothelium-Dependent Vasodilation : Role of Endothelium-Derived Nitric Oxide and Endothelial Progenitor Cells(Atherosclerosis, clinical(05)(IHD),Poster Session(English),The 72nd An
- PE-118 Autologous Bone-Marrow Mesenchymal Stem Cell Implantation Induces Angiogenesis and Improves Endothelial Function in a Rabbit Ischemic Limb Model(Peripheral circulation/Vascular disease(03)(H),Poster Session(English),The 72nd Annual Scientific Meeti
- OJ-205 Aging and Hypertension Are Independent Risk Factors for Reduced Number of Circulating Endothelial Progenitor Cells(Hypertension, clinical(03)(H),Oral Presentation (Japanese),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
- OE-329 Periodontitis is Associated with Endothelial Dysfunction in Healthy Subjects as Well as Hypertensive Patients(Hypertension, clinical(02)(H),Oral Presentation(English),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
- PJ-718 The Effect of Selective Mineralocorticoid Receptor Blocker Eplerenone on Endothelial Function in Patients with Essential Hypertension(PJ121,Hypertension, Clinical 2 (H),Poster Session (Japanese),The 73rd Annual Scientific Meeting of The Japanese Ci
- PE-153 Activation of Rho Kinase (ROCK) Leads to Left Ventricular Diastolic Function in Patients with Essential Hypertension(PE026,Cardiac Function (Clinical) 1 (M),Poster Session (English),The 73rd Annual Scientific Meeting of The Japanese Circulation Soc
- OE-340 Rho Kinase Activity is Associated with Left Ventricular Hypertrophy in Hypertensive Patients(OE58,Hypertension, Clinical 2 (H),Oral Presentation (English),The 73rd Annual Scientific Meeting of The Japanese Circulation Society)
- Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
- Raman Scattering Studies of CuInS_2 Films Grown by RF Ion Plating
- Low-Temperature Deposition of CuIn(S_xSe_)_2 Thin Films by Ionized Cluster Beam Technique
- 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
- High-Power Pure Blue InGaN Laser Diodes
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
- Cd-Doped InGaN Films Grown on GaN Films
- Si-Doped InGaN Films Grown on GaN Films
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
- Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
- Hole Compensation Mechanism of P-Type GaN Films
- Thermal Annealing Effects on P-Type Mg-Doped GaN Films
- High-Power GaN P-N Junction Blue-Light-Emitting Diodes
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
- Measurement of Flow-Mediated Vasodilation of the Brachial Artery : A Comparison of Measurements in the Seated and Supine Positions
- Pycnogenol^【○!R】, French Maritime Pine Bark Extract, Augments Endothelium-Dependent Vasodilation in Humans
- Biexciton Luminescence from GaN Epitaxial Layers
- Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
- Study of GaN-based Laser Diodes in Near Ultraviolet Region(Semiconductors)
- Wavelength Dependence of InGaN Laser Diode Characteristics
- Hydrogen Dissociation from Mg-doped GaN
- Spectral Electroluminescence Mapping of a Blue InGaN Single Quantum Well Light-Emitting Diode
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
- Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
- Critical Current Characteristics in Superconducting Y-Ba-Cu-O Prepared by the Melt Process
- Ultra-High Efficiency White Light Emitting Diodes
- A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
- Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
- Estimation of Critical Current Density in a Melt-Processed Superconducting Y-Ba-Cu-O Using AC and DC Inductive Methods
- Effect of Size of Superconductor on Estimation of Critical Current Density Using AC Inductive Method
- Irreversibility Line in Polycrystalline Superconducting Bi-Pb-Sr-Ca-Cu-0 with Oriented C-Axis
- Magnetic Properties of Granular Superconductors Rb_3C_
- Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
- Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
- Infrared Lattice Absorption in Wurtzite GaN
- CW Operation of the First-Order AlInGaN 405nm Distributed Feedback Laser Diodes
- 365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
- High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
- Ultraviolet GaN Single Quantum Well Laser Diodes
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
- Velocity of Sound in and Elastic Properties of Cs_2O-B_2O_3 Glasses
- Flux Creep Characteristics after High-Temperature Magnetization in YBaCuO Superconductor
- Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
- Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
- PE-146 Six French Transradial Approach Percutaneous Coronary Intervention with Percu Surge for Stable Angina Pectoris (SIX SENSE)(Coronary Revascularization, PTCA/Stent/DCA/Rotablator/New Device 8 (IHD) : PE25)(Poster Session (English))
- OJ-144 Impact of Persistent ST-segment Elevation after Spontaneous Reperfusion in Patients with Anterior Acute Myocardial Infarction(Acute Myocardial Infarction, Clinical (Diagnosis/Treatment) 4 (IHD) : OJ17)(Oral Presentation (Japanese))
- 5 Temporal Trend of Treatment and Outcome of Acute Myocardial Infarction(Symposium 7 (SY7) (IHD) : Longterm Prognosis of Japanese Patients with Coronary Disease : Medical Therapy, PCI, Surgical Intervention)(Special Program)
- Flux Pinning Characteristics in Bi-2212 Single Crystal
- Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
- Critical Current Densities in Superconducting Y-Ba-Cu-O Prepared by the Quench-and-Melt Growth Technique
- Critical Current Density of Melt Processed YBa2Cu3Ox Bulk Superconductors (超電導)
- 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
- Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
- Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium : Semiconductors
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage
- Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage
- Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
- Long Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates
- Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
- Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy
- Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas