Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• Mukai Takashi

  Nichia Corporation

• Mitani Tomotsugu

  The School Of Materials Science Japan Advanced Institute Of Science And Technology

• ZOHTA Yasuhito

  Tokyo University of Technology, Department of Engineering Science

• MITANI Tomotsugu

  Nichia Corp.

関連論文

• Control of Carrier Concentration in n-Type Hot-Pressed Bi_Sb_Te_3 Alloys
• Hole Compensation Mechanism of P-Type GaN Films
• Thermal Annealing Effects on P-Type Mg-Doped GaN Films
• High-Power GaN P-N Junction Blue-Light-Emitting Diodes
• Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
• Hydrogen Dissociation from Mg-doped GaN
• Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
• Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
• Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg

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