Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN

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関連論文

Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
Hole Compensation Mechanism of P-Type GaN Films
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
High-Power GaN P-N Junction Blue-Light-Emitting Diodes
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
Hydrogen Dissociation from Mg-doped GaN
Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes
Atomic Arrangement at the AlN/Si(110) Interface
Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium : Semiconductors
Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage
Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage
Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires
Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg
Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy
Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas
Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas (Special Issue : Dry Process)

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