Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
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概要
- 論文の詳細を見る
We present a novel metalorganic hydride vapor phase epitaxy (MOHVPE) approach for lateral epitaxy of high-quality crack-free AlN layers over sapphire with thicknesses in excess of 20 μm. Feasibility of depositing thick AlN buffer layers and device quality AlxGa1-xN heterojunctions in a single chamber and growth run using metalorganic chemical vapor deposition and hydride vapor phase epitaxy growths either sequentially or simultaneously is demonstrated. Transmission electron microscopy, atomic force microscopy, and cathodoluminescence analyses confirm the viability of the MOHVPE grown layers for subsequent device fabrication.
- Japan Society of Applied Physicsの論文
- 2007-08-25
著者
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Adivarahan Vinod
Department Of Ee University Of South Carolina
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GAEVSKI Mikhail
Department of Electrical Engineering, University of South Carolina
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Khan Asif
Department Of Ece University Of South Carolina
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Mei Jin
Department Of Physics And Astronomy Arizona State University
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Fareed Qhalid
Department Of Electrical Engineering University Of South Carolina
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Ponce Fernando
Department Of Physics And Astronomy Arizona State University
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Khan Asif
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Katona Thomas
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Gaevski Mikhail
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Ponce Fernando
Department of Physics, Arizona State University, Tempe, AZ 85287, U.S.A.
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Katona Thomas
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.
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Mei Jin
Department of Physics, Arizona State University, Tempe, AZ 85287, U.S.A.
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Adivarahan Vinod
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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