Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
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概要
- 論文の詳細を見る
We report for the first time on the RF performance of a low-threshold AlGaN/GaN metal–oxide–semiconductor heterostructure field transistor (MOSHFET) with zirconium dioxide as the gate dielectric. Low gate leakage current of $5\times 10^{-7}$ A/mm2 and a threshold voltage which was only 1 V higher than that of an HFET were achieved. The RF power of these devices at 2 GHz was 14.32 W/mm at 50 V drain bias.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Yang Jinwei
Department Of Ee University Of South Carolina
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Adivarahan Vinod
Department Of Ee University Of South Carolina
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ASIF KHAN
Department of EE, University of South Carolina
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Rai Shiva
Department Of Ee University Of South Carolina
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Koudymov Alexei
Department Of Ee University Of South Carolina
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Tipirneni Naveen
Department Of Ee University Of South Carolina
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Simin Grigory
Department Of Ee University Of South Carolina
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Rai Shiva
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
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Asif Khan
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
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Tipirneni Naveen
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
-
Simin Grigory
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
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Adivarahan Vinod
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
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