High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire(<Special Issue>Heterostructure Microelectronics with TWHM2003)
スポンサーリンク
概要
- 論文の詳細を見る
Recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (f_T) of 80 GHz and maximum frequency of oscillation (f_<max>) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
-
Yang Jinwei
Department Of Ee University Of South Carolina
-
Khan Muhammed
Department Of Electrical And Computer Engineering University Of South Carolina
-
ADESIDA Ilesanmi
Micro and Nanotechnology Laboratory, University of Illinois
-
Yang Jinwei
Department Of Electrical And Computer Engineering University Of South Carolina
-
KUMAR Vipan
Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, Universit
-
Adesida Ilesanmi
Micro And Nanotechnology Laboratory And Department Of Electrical And Computer Engineering University
-
Adesida Ilesanmi
Micro And Nanotechnology Laboratory
-
Kumar Vipan
Micro And Nanotechnology Laboratory And Department Of Electrical And Computer Engineering University
-
Kumar Vipan
Micro And Nanotechnology Laboratory
関連論文
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
- Planar Schottky Diodes on High Quality A-plane GaN
- Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
- Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission
- Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
- High-Rate Dry Etching of ZnO in BCl_3/CH_4/H_2 Plasmas
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm
- Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Utilizing an Undoped Photo-Absorption Layer
- High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire(Heterostructure Microelectronics with TWHM2003)
- Fabrication and Characterization of Capless In_Al_As/In_Ga_As HEMTs(Semiconductor Materials and Devices)
- Methods and Mechanisms for Ohmic Contacts on AlGaN/GaN HEMTs
- High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas
- Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides
- Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer
- Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
- Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation
- Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors