Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides
スポンサーリンク
概要
- 論文の詳細を見る
Experimental and theoretical investigations were carried out on the spectral responses of micro-racetrack notch filters based on InP/InGaAsP high mesa optical waveguides that were fabricated by utilizing electron beam lithography and inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. The critical factors determining the performance of micro-racetrack resonator-coupled devices were identified to be the optical power coupling efficiency between the bus waveguide and the racetrack resonator and the round-trip loss of the racetrack resonator. These parameters were extracted from the measured spectral responses of three single resonator-coupled waveguide devices with different gap spacings between the bus waveguides and the racetrack resonators, which were 0.2, 0.35, and 0.5 μm. These extracted parameters can be used to uniquely determine the pole and zero locations of the unit racetrack-coupled waveguide filter. The phase responses as well as the magnitude responses of optical filters can be calculated using the uniquely determined pole and zeros. The extracted parameters were used to calculate the spectral responses of a high-order racetrack-coupled device that was designed by cascading the three single racetrack-coupled devices having gap spacings of 0.2, 0.35, and 0.5 μm. The calculated and measured spectral responses of the high-order filters were compared to verify the parameter extraction process. The measured spectral response of the filters matched very well with the theoretically calculated response using the extracted parameters from the first-order racetrack resonator-coupled devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Bae Jeong-woon
Micro And Nanotechnology Laboratory University Of Illinois
-
LEE Yeung
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology
-
YU Bong-Ahn
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology
-
Adesida Ilesanmi
Micro And Nanotechnology Laboratory
-
Jang Jae-Hyung
Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-Dong Buk-Gu, Gwangju 500-712, Korea
-
Jang Jae-Hyung
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
-
Choi Woo-Seok
Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-Dong Buk-Gu, Gwangju 500-712, Korea
-
Zhao Weifeng
Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, 208 N. Wright St., Urbana, IL 61801, U.S.A.
-
Bae Jeong-Woon
Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, 208 N. Wright St., Urbana, IL 61801, U.S.A.
-
Yu Bong-Ahn
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, 1 Oryong-Dong Buk-Gu Gwangju 500-712, Korea
-
Lee Yeung
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, 1 Oryong-Dong Buk-Gu Gwangju 500-712, Korea
-
JANG Jae-Hyung
Department of Electronics Engineering, Chungnam National University
関連論文
- High-Rate Dry Etching of ZnO in BCl_3/CH_4/H_2 Plasmas
- Backward Terahertz Generation in Periodically Poled Lithium Niobate Crystal via Difference Frequency Generation
- Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure
- Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Utilizing an Undoped Photo-Absorption Layer
- High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire(Heterostructure Microelectronics with TWHM2003)
- Fabrication and Characterization of Capless In_Al_As/In_Ga_As HEMTs(Semiconductor Materials and Devices)
- Methods and Mechanisms for Ohmic Contacts on AlGaN/GaN HEMTs
- High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas
- Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors
- Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides
- Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer
- Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation
- Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
- Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors