High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas

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概要

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• High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4/H2 mixture and dc-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at dc-bias voltage of $-350$ V.

• 2003-05-15

著者

• Cho Nam-gil

  Department Of Materials Science And Engineering Sung Kyun Kwan University

• Jeong Chang-hyun

  Department Of Materials Science And Engineering Sung Kyun Kwan University

• Park Seong-ju

  Department Of Materials Science And Engineering And Center For Optoelectronic Materials Research Kwa

• Kim Kyoung-kook

  Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)

• Kim Han-ki

  Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)

• Seong Tae-yeon

  Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju

• Yeom Geun-young

  Department Of Materials Engineering Sungkyunkwan University

• Adesida Ilesanmi

  Micro And Nanotechnology Laboratory

• Park Seong-Ju

  Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea

• Bae Jeong-Woon

  Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, 208 N. Wright St., Urbana, IL 61801, U.S.A.

• Bae Jeong-Woon

  Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, U.S.A.

• Seong Tae-Yeon

  Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea

• Kim Han-Ki

  Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea

• Cho Nam-Gil

  Department of Materials Science and Engineering, Sung Kyun Kwan University, Suwon 440-746, Korea

• Kim Kyoung-Kook

  Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea

• Jeong Chang-Hyun

  Department of Materials Science and Engineering, Sung Kyun Kwan University, Suwon 440-746, Korea

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