Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain <I>β</I> of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.
著者
-
Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
-
Jung Yi-Jung
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
-
Kwak Ho-Young
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
-
CHUNG Yi-Sun
Magnachip Semiconductor Inc.
-
KWON Hyuk-Min
Department of Electronics Engineering, Chungnam National University
-
SHIN Jong-Kwan
Department of Electronics Engineering, Chungnam National University
-
JANG Jae-Hyung
Department of Electronics Engineering, Chungnam National University
-
HWANG Seon-Man
Department of Electronics Engineering, Chungnam National University
-
KWON Sung-Kyu
Department of Electronics Engineering, Chungnam National University
-
SUNG Seung-Yong
Department of Electronics Engineering, Chungnam National University
-
LEE Da-Soon
Magnachip Semiconductor Inc.
-
KWAK Ho-Young
Department of Electronics Engineering, Chungnam National University
関連論文
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- Conduction Mechanism and Reliability Characteristics of a Metal--Insulator--Metal Capacitor with Single ZrO2 Layer
- Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure
- Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering
- Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
- Effects of a SiO_2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides
- Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
- Electrical Characteristic Analysis of Postannealed ZnO Thin-Film Transistors under O Ambient (Special Issue : Advanced Electromaterials)
- Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors
- Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor’s
- Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer
- Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
- Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
- Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Electrical Instabilities in Amorphous InGaZnO Thin Film Transistors with Si3N4 and Si3N4/Al2O3 Gate Dielectrics
- Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO_2 and S_3N_4 as Trapping Layer
- Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides
- Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer
- New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
- Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device
- Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime
- Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device
- Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
- Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis (Special Issue : Solid State Devices and Materials)
- Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
- Novel PNP BJT S tructure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
- Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs