Effects of Fluorine Implantation on 1/<I>f</I> Noise, Hot Carrier and NBTI Reliability of MOSFETs

スポンサーリンク

概要

• 論文の詳細を見る

• The effects of fluorine implantation on flicker noise and reliability of NMOSFET and PMOSFETs were concurrently investigated. The flicker noise of an NMOSFET was decreased about 66% by fluorine implantation, and that of a PMOSET was decreased about 76%. As indicated by the results, fluorine implantation is one of the methods that can be used to improve the noise characteristics of MOSFET devices. However, hot-carrier degradation was enhanced by fluorine implantation in NMOSFETs, which can be related to the difference of molecular binding within the gate oxide. On the contrary, in case of PMOSFETs, NBTI life time was increased by fluorine implantation. Therefore, concurrent investigation of hot-carrier and NBTI reliability and flicker noise is necessary in developing MOSFETs for analog/digital mixed signal applications.

著者

• Lee Hi-deok

  Dept. Of Electronics Engineering Chungnam National Univ.

• Kwon Hyuk-min

  Dept. Of Electronics Engineering Chungnam National University

• LEE Hi-Deok

  Dept. of Electronics Engineering, Chungnam National Univ.

• CHUNG Yi-Sun

  Magnachip Semiconductor Inc.

• SHIN Jong-Kwan

  Dept. of Electronics Engineering, Chungnam National Univ.

• JANG Jae-Hyung

  Dept. of Electronics Engineering, Chungnam National Univ.

• LEE Da-Soon

  Magnachip Semiconductor Inc.

• KWAK Ho-Young

  Dept. of Electronics Engineering, Chungnam National Univ.

• KWON Sung-Kyu

  Dept. of Electronics Engineering, Chungnam National Univ.

• HWANG Seon-Man

  Dept. of Electronics Engineering, Chungnam National Univ.

• SUNG Seung-Yong

  Dept. of Electronics Engineering, Chungnam National Univ.

関連論文

• Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
• New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
• Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
• Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
• Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
• Characterization of the Co-Silicide Penetration Depth into the Junction Area
• Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
• Novel Nitrogen doped Ni SALICIDE Process for Nano-Scale CMOS Technology
• Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology
• Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Theoretical Investigation of Neutral Point Defects in CoSi_2
• Dopant Dependency of Nickel Silicide and Its Improvement Utilizing Ni-Pd (5%) on SOI Substrate for Nano-scale CMOSFET
• Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
• Effect of Temperature on the Bandwidth and Responsivity of Uni-Traveling-Carrier and Modified Uni-Traveling-Carrier Photodiodes
• Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Utilizing an Undoped Photo-Absorption Layer
• Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
• Dependence of hot carrier reliability and low frequency noise on channel stress in nanoscale n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
• Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
• Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
• Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
• Novel PNP BJT S tructure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
• Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs

もっと見る 閉じる

スポンサーリンク