Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
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概要
- 論文の詳細を見る
- 2013-05-01
著者
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CHUNG Yi-Sun
Magnachip Semiconductor Inc.
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LEE Da-Soon
Magnachip Semiconductor Inc.
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KWON Hyuk-Min
the Dept. of Electronics Engineering, Chungnam National Univ.
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KWON Hyuk-Min
the Department of Electronics Engineering, Chungnam National University
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HWANG Seon-Man
the Department of Electronics Engineering, Chungnam National University
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JANG Jae-Hyung
the Department of Electronics Engineering, Chungnam National University
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KWAK Ho-Young
the Department of Electronics Engineering, Chungnam National University
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KWON Sung-Kyu
the Department of Electronics Engineering, Chungnam National University
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SUNG Seung-Yong
the Department of Electronics Engineering, Chungnam National University
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SHIN Jong-Kwan
the Department of Electronics Engineering, Chungnam National University
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LEE Hi-Deok
the Department of Electronics Engineering, Chungnam National University
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KWON Sung-Kyu
the Dept. of Electronics Engineering, Chungnam National Univ.
関連論文
- Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
- Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
- Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
- Novel PNP BJT S tructure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
- Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs