Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
Kwon Hyuk-Min
Dept. of Electronics Engineering, Chungnam National University
-
Han In-Shik
Dept. of Electronics Engineering, Chungnam National University
-
Lee Hi-Deok
Dept. of Electronics Engineering, Chungnam National University
-
GOO Tae-Gyu
Dept. of Electronics Engineering, Chungnam National University
-
CHOI Won-Ho
Dept. of Electronics Engineering, Chungnam National University
-
NA Min-Ki
Dept. of Electronics Engineering, Chungnam National University
-
LEE Ga-Won
Dept. of Electronics Engineering, Chungnam National University
-
LEE Heui-Seung
Magnachip Semiconductor Inc.
-
Joo Han-Soo
Dept. of Electronic Engineering, Chungnam National University
-
Park Sung-Soo
Dept. of Electronic Engineering, Chungnam National University
-
Yoo Ook-Sang
Dept. of Electronic Engineering, Chungnam National University
-
Om Jae-Chul
Mobile & FLASH Division, Hynix Semiconductor Inc.
-
Lee Seaung-Suk
Mobile & FLASH Division, Hynix Semiconductor Inc.
-
Bae Gi-Hyun
Mobile & FLASH Division, Hynix Semiconductor Inc.
-
Park Sung-soo
Dept. Of Electronics Engineering Chungnam National University
-
Lee H‐j
Dept. Of Electronics Engineering Chungnam National University
-
Lee Hi-deok
R&d Division Lg Semicon Co. Ltd.
-
Lee Hi-deok
Dept. Of Electronics Engineering Chungnam National Univ.
-
Na Min-ki
Dept. Of Electronics Engineering Chungnam National University
-
Lee Ga-won
Dept. Of Electronics Engineering Chungnam National University
-
Joo Han-soo
Dept. Of Electronics Engineering Chungnam National University
-
Bae Gi-hyun
Mobile & Flash Division Hynix Semiconductor Inc.
-
Choi Won-ho
Dept. Of Electronics Engineering Chungnam National University
-
Yoo Ook-sang
Dept. Of Electronics Engineering Chungnam National University
-
Lee Seaung-suk
Mobile & Flash Division Hynix Semiconductor Inc.
-
Om Jae-chul
Mobile & Flash Division Hynix Semiconductor Inc.
-
Lee H‐j
Magnachip Semiconductor Inc.
-
Han In-shik
Dept. Of Electronics Engineering Chungnam National University
-
Kwon Hyuk-min
Dept. Of Electronics Engineering Chungnam National University
-
Lee H‐d
Chungnam National Univ. Taejon Kor
-
Han In-shik
Department Of Electronics Engineering Chungnam National University
-
Park Si-ho
Chebigen Inc. 350-b. Chungmugwan Sejong University
-
Goo Tae-gyu
Dept. Of Electronics Engineering Chungnam National University
関連論文
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)
- Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- New charge pumping method for characterization of charge trapping layer in oxide-nitride-oxide structure (Special issue: Solid state devices and materials)
- Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
- Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Investigation of device performance and negative bias temperature instability of plasma nitrided oxide in nanoscale p-channel metal-oxide-semiconductor field-effect transistor's (Special issue: Solid state devices and materials)
- Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Novel Nitrogen doped Ni SALICIDE Process for Nano-Scale CMOS Technology
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology
- Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- Analysis of Si-SiO_2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Theoretical Investigation of Neutral Point Defects in CoSi_2
- Potent Cytotoxic Effects of Novel Retinamide Derivatives in Ovarian Cancer Cells(Medicinal Chemistry)
- Dopant Dependency of Nickel Silicide and Its Improvement Utilizing Ni-Pd (5%) on SOI Substrate for Nano-scale CMOSFET
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs
- Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
- Synthesis and Biological Activity of Novel Retinamide and Retinoate Derivatives
- Conduction Mechanism and Reliability Characteristics of a Metal--Insulator--Metal Capacitor with Single ZrO2 Layer
- Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
- Dependence of hot carrier reliability and low frequency noise on channel stress in nanoscale n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
- Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
- Analysis of Si–SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
- Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor’s
- Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
- Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
- Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
- Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime
- Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory
- Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs