Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)

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概要

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• We report on the fabrication of dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO_2/Si substrates at 100℃. This TFT has a channel width of 100-um and channel length of 5-um. The fabricated dual-gate ZnO TFTs exhibits a field effect mobility of about 0.42 cm^2/V s, a subthreshold swing 390 mV/decade, an on-off ratio 4.3 x 10^8, and a threshold voltage 0.9V, which are greatly improved characteristics compared with conventional bottom-gate ZnO TFTs.

• 2010-06-23

著者

• KIM Young

  National Nanofab Center

• KANG Min

  National Nanofab Center

• JEONG Kang

  Dept. of Electronic Engineering, Chungnam National University

• OH Jae

  National Nanofab Center

• YOO Dong

  National Nanofab Center

• LEE Hi

  Dept. of Electronic Engineering, Chungnam National University

• Lee Hi

  Dept. Of Electronic Engineering Chungnam National University

• Lee Ga-won

  Dept. Of Electronics Engineering Chungnam National University

• Jeong Kang

  Dept. Of Electronic Engineering Chungnam National University

• LEE Ga

  Dept. of Electronic Engineering, Chungnam National University

• Kim Young

  National Genome Information Center Korea Research Institute Of Bioscience And Biotechnology

• Kim Young

  National Center for Nanoprocess and Equipments, Honam Technology Division, Korea Institute of Industrial Technology, Gwangju 500-480, Korea

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