Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology
スポンサーリンク
概要
- 論文の詳細を見る
It is shown that anomalous off-current fluctuation may happen due to phosphorous channeling through gate polysilicon during source/drain implantation particularly for the first phosphorus double-implantation scheme. It is proven that increased grain size by phosphorus predoping is the main cause of channeling. A stacked polystructure with an amorphous top layer and a columnar bottom layer is proposed to suppress the phosphorus channeling and hence to prevent the off-current fluctuation. It is shown that the proposed stacked polystructure is highly efficient in suppressing the phosphorus channeling without degradation of device performance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
-
Lee Hi
Dept. Of Electronic Engineering Chungnam National University
-
Kim Yong
Dept. Of Electronics Engineering Chungnam National University
-
Kim Dae
System Ic R&d Division Hynix Semiconductor Inc.
-
Baek Seong
System Ic R&d Division Hynix Semiconductor Inc.
-
Lee Heui
System Ic R&d Division Hynix Semiconductor Inc.
-
Ji Hee
Dept. Of Electronics Engineering Chungnam National University
-
CHANG Hoon
System IC R&D Division, Hynix Semiconductor Inc.
-
LEE Jin
System IC R&D Division, Hynix Semiconductor Inc.
-
KIM Kyoung
System IC R&D Division, Hynix Semiconductor Inc.
-
KIM Myung
System IC R&D Division, Hynix Semiconductor Inc.
-
Bae Hui
System Ic R&d Division Hynix Semiconductor Inc.
-
Song Byeung
System Ic R&d Division Hynix Semiconductor Inc.
-
Kim Jae
System Ic R&d Division Hynix Semiconductor Inc.
-
Kang Young
System Ic R&d Division Hynix Semiconductor Inc.
-
Park Sung
System Ic R&d Division Hynix Semiconductor Inc.
-
Lee Hi
Dept. of Electronics Engineering, Chungnam National University, Yusong-Gu, Daejeon 305-764, Korea
-
Kim Dae
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Bae Hui
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Baek Seong
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Lee Jin
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Kang Young
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Kim Myung
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Kim Jae
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Park Sung
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Kim Kyoung
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Ji Hee
Dept. of Electronics Engineering, Chungnam National University, Yusong-Gu, Daejeon 305-764, Korea
-
Kim Yong
Dept. of Electronics Engineering, Chungnam National University, Yusong-Gu, Daejeon 305-764, Korea
-
Song Byeung
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Chang Hoon
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Lee Heui
System IC R&D Division, Hynix Semiconductor Inc., Hyangjeong, Hungduk-gu, Cheongju, Choongbuk 361-725, Korea
-
Kim Yong
Dept. of Architectural Engineering, University of Incheon
関連論文
- Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)
- Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)
- New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology
- Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
- Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Novel Nitrogen doped Ni SALICIDE Process for Nano-Scale CMOS Technology
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology
- Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- B-5-42 High Throughput MAC Architecture for IEEE 802.11n
- SONOS-Type Flash Memory with HfO_2 Thinner than 4nm as Trapping Layer Using Atomic Layer Deposition
- Diallel Analysis of Plant and Ear Heights in Tropical Maize (Zea mays L.)
- Thermal Modeling of Capacitor Discharge Impulse Magnetizer
- Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer
- Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology