Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

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概要

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• The characteristics of Ni-Germanosilicide were studied by sheet resistance, Field Emission Scanning Electron Microscope (FE-SEM), X-Ray Diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS). It was found that Ni-Germanosilicide formed using pure-Ni has a very poor thermal stability. After the post-silicidation annealing, severe agglomeration and Ge segregation were occurred and almost all the silicide layer was replaced by oxide and remained Ge compound. That is, there happened abnormal oxidation of Ni-Germanosilicide. To prevent the unintended oxidation or to improve the Ni-Germanosilicide thermal stability, various kinds of triple-layer metal structures were applied in this work and Ti/Ni/TiN triple-layer was found to be very effective structure to prevent the unwanted abnormal oxidation and hence to improve the thermal stability of the Ni-Germanosilicide.

• 社団法人電子情報通信学会の論文
• 2004-06-23

著者

• Kim Yong

  Magnachip Semiconductor Inc.

• Lee Hi-Deok

  Dept. of Electronics Engineering, Chungnam National University

• JI Hee-Hwan

  Magnachip Semiconductor Inc.

• LEE Heui-Seung

  Magnachip Semiconductor Inc.

• JI Hee-Hwan

  Dept. of Electronics Engineering, Chungnam National University

• KIM Yong-Goo

  Dept. of Electronics Engineering, Chungnam National University

• YUN Jang-Gn

  Dept. of Electronics Engineering, Chungnam National University

• OH Soon-Young

  Dept. of Electronics Engineering, Chungnam National University

• HUANG Bin-Feng

  Dept. of Electronics Engineering, Chungnam National University

• KIM Yong-Jin

  Dept. of Electronics Engineering, Chungnam National University

• Yun Jang‐gn

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Cho Yoo-jeong

  Dept. Of Materials Engineering Korea University Of Technology And Education

• Huang Bin

  Department Of Electronics Engineering Chungnam National University

• Lee H‐j

  Dept. Of Electronics Engineering Chungnam National University

• Lee Hi-deok

  R&d Division Lg Semicon Co. Ltd.

• Lee Hi-deok

  Dept. Of Electronics Engineering Chungnam National Univ.

• Huh Sang

  R&d Center Magnachip Semiconductor Ltd.

• Cha Han

  R&d Center Magnachip Semiconductor Ltd.

• Kim Y‐c

  Magnachip Semiconductor Inc.

• Lee J‐g

  System Ic R & D Division Hynix Semiconductor Inc.

• Lee Jeong-gun

  R&d Center Lg Industrial Systems Co. Ltd.

• Lee H‐j

  Magnachip Semiconductor Inc.

• Kim Y‐j

  Magnachip Semiconductor Inc.

• Kim Yeong-cheol

  Dept. Of Materials Eng. Korea University Of Technology And Education

• Kim Yong-goo

  Dept. Of Electrical And Electronic Eng. Yonsei Univ.

• Ji Hee

  Dept. Of Electronics Engineering Chungnam National University

• Kim Yong-jin

  Dept. Of Electronics Engineering Chungnam National University

• HEO Sang-Bum

  System IC R&D Division, Hynix Semiconductor Inc.

• LEE Jeong-Gun

  System IC R&D Division, Hynix Semiconductor Inc.

• Yun Jang-Gu

  Dept. of Electronics Engineering, Chungnam National University

• CHA Han-Seob

  System IC R & D Division, Hynix Semiconductor Inc.

• Ji Hee

  Magnachip Semiconductor Inc.

• Kim Yong-goo

  Electrical And Computer Engineering Chungnam National University

• Lee Jeong-gun

  System Ic R & D Division Hynix Semiconductor Inc.

• Lee H‐d

  Chungnam National Univ. Taejon Kor

• Yun Jang

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Oh Soon

  Dept. Of Electronics Engineering Chungnam National University

• Yur Jang-gn

  School Of Electrical Engineering Seoul National University

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