Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor’s

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概要

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• In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transistor (PMOSFET). PNOs show the improvement of dielectric performance compared to TNO with no change of the device performance. PNOs also show the improvement of NBTI immunity than TNO at low temperature stress, whereas NBTI immunity of PNO with high N concentration can be worse than TNO at high temperature stress. Recovery effect of NBTI degradation of PNO is lower than that of TNO and it is increased as the N concentration is increased in PNO because the dissociated Si dangling bonds and generated positive oxide charges are repassivated and neutralized, respectively. Moreover, complete recovery of $\Delta V_{\text{th}}$ is dominated by neutralization of positive oxide charges. Therefore, N contents at polycrystalline Si/SiO2 interface as well as N contents at Si/SiO2 interface can affect significantly on NBTI degradation and recovery effect.

• 2008-04-25

著者

• JI Hee-Hwan

  Magnachip Semiconductor Inc.

• LEE Heui-Seung

  Magnachip Semiconductor Inc.

• KANG Young-Seok

  Magnachip Semiconductor Inc.

• KIM Dae-Byung

  Magnachip Semiconductor Inc.

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Kim Yong-Goo

  Department of Electrical and Electronics Engineering, Yonsei University

• GOO Tae-Gyu

  Department of Electronics Engineering, Chungnam National University

• Han In-shik

  Department Of Electronics Engineering Chungnam National University

• Choi Won-Ho

  Department of Physiology and Anesthesiology, College of Medicine, Institute of Biomedical Science and Technology, Konkuk University

• Na Min-Ki

  Department of Electronics Engineering, Chungnam National University, Yusong-gu, Daejeon 305-764, Korea

• Na Min-Ki

  Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea

• Yoo Ook-Sang

  Department of Electronics Engineering, Chungnam National University, Yusong-gu, Daejeon 305-764, Korea

• Park Sung-Hyung

  Department of Electronics Engineering, Chungnam National University, Yusong-gu, Daejeon 305-764, Korea

• Kim Dae-Byung

  Magnachip Semiconductor Inc., Hungduk-gu, Cheongju, Choongbuk 361-725, Korea

• Choi Won-Ho

  Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea

• Kang Young-Seok

  Magnachip Semiconductor Inc., Hungduk-gu, Cheongju, Choongbuk 361-725, Korea

• Ji Hee-Hwan

  Magnachip Semiconductor Inc., Hungduk-gu, Cheongju, Choongbuk 361-725, Korea

• Goo Tae-Gyu

  Department of Electronics Engineering, Chungnam National University, Yusong-gu, Daejeon 305-764, Korea

• Kim Yong-Goo

  Department of Electronics Engineering, Chungnam National University, Yusong-gu, Daejeon 305-764, Korea

• Choi Won-Ho

  Department of Computer Engineering, University of Kyungnam

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