Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
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概要
- 論文の詳細を見る
- 2011-12-25
著者
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Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
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Han In-shik
Department Of Electronics Engineering Chungnam National University
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Kwon Hyuk-Min
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Park Sang-Uk
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Jung Yi-Jung
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Kang Chang-Yong
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Lee Byoung-Hun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea
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Jammy Raj
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Kwak Ho-Young
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Choi Woon-Il
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Ha Man-Lyun
Dongbu HiTec Semiconductor Inc., Seoul 891-10, Korea
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Lee Ju-Il
Dongbu HiTec Semiconductor Inc., Seoul 891-10, Korea
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KWON Hyuk-Min
Department of Electronics Engineering, Chungnam National University
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KWAK Ho-Young
Department of Electronics Engineering, Chungnam National University
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- Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
- Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
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