Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

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概要

• 論文の詳細を見る

• It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress in nano-scale CMOSFETs. Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. ln case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method.

• 社団法人電子情報通信学会の論文
• 2004-06-24

著者

• Kim Yong

  Magnachip Semiconductor Inc.

• Han In-Shik

  Dept. of Electronics Engineering, Chungnam National University

• LEE Heui-Seung

  Magnachip Semiconductor Inc.

• Lee H‐j

  Dept. Of Electronics Engineering Chungnam National University

• Lee Hi-deok

  R&d Division Lg Semicon Co. Ltd.

• Kim Y‐c

  Magnachip Semiconductor Inc.

• Lee H‐j

  Magnachip Semiconductor Inc.

• Kim Y‐j

  Magnachip Semiconductor Inc.

• Choi Seo-yun

  Electrical And Computer Engineering Chungnam National University.

• Han In-shik

  Dept. Of Electronics Engineering Chungnam National University

• Kim Yong-goo

  Electrical And Computer Engineering Chungnam National University

• Na Jun-Nee

  Electrical and Computer Engineering, Chungnam National University

• Han In-Shik

  Electrical and Computer Engineering, Chungnam National University

• Lee Hi-Deok

  Electrical and Computer Engineering, Chungnam National University

• Lee H‐d

  Chungnam National Univ. Taejon Kor

• Han In-shik

  Department Of Electronics Engineering Chungnam National University

• Na Jun-nee

  Electrical And Computer Engineering Chungnam National University

• Na Jun-Hee

  Electrical and Computer Engineering, Chungnam National University

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