Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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LEE Hi-Deok
Advanced Technology Laboratory., LG Semicon Co.
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LEE Young-Jong
Advanced Technology Laboratory., LG Semicon Co.
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Hwang Jeong-Mo
Advanced Technology Laboratory., LG Semicon Co.,
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Lee Hi-deok
R&d Division Lg Semicon Co. Ltd.
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Lee Hi-deok
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee Hi-deok
Advanced Technology Laboratory. Lg Semicon Co.
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Hwang Hyun-sang
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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JUNG Jong-Wan
Advan. Tech. Lab., LG Semicon Co., Ltd.
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LEE Kye-Nam
Advan. Tech. Lab., LG Semicon Co., Ltd.
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Lee H‐d
Chungnam National Univ. Taejon Kor
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Lee Kye-nam
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Jung Jong-wan
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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