Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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Kim J‐m
Department Of Manufacturing Science Graduate School Of Engineering Osaka University
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Jung J‐w
Hanyang Univ. Seoul Kor
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Kim Jong-min
Materials & Devices Lab. Samsung Advanced Institute Of Technology
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Kim Jong-min
Hyundai Electronics Industries Co. Ltd.
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Son Jeong-hwan
Hyundai Electronics Industries Co. Ltd.
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Jung Jong-wan
Hyundai Electronics Industries Co. Ltd.
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LEE Youngjong
Hyundai Electronics Industries Co., Ltd.
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Lee Youngjong
Hyundai Electronics Industries Co. Ltd.
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Son J‐h
Hyundai Electronics Industries Co. Ltd.
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