Lee Youngjong | Hyundai Electronics Industries Co. Ltd.
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概要
関連著者
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Jung Jong-wan
Hyundai Electronics Industries Co. Ltd.
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Lee Youngjong
Hyundai Electronics Industries Co. Ltd.
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Jung J‐w
Hanyang Univ. Seoul Kor
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LEE Youngjong
Hyundai Electronics Industries Co., Ltd.
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Park S‐k
Korea Inst. Sci. And Technol. Seoul Kor
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Kang Dae-kwan
Hyundai Electronics Industries Co. Ltd.
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Park Sung-kun
Department Of Electronic Engineering Kyungpook National University
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Park Sung-kye
Pg.1 R&d Division Lg Semicon Co. Ltd.
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Kim Jong-min
Hyundai Electronics Industries Co. Ltd.
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Son Jeong-hwan
Hyundai Electronics Industries Co. Ltd.
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Yoon Gyu-han
Hyundai Electronics Industries Co. Ltd.
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PARK Sung-Kye
Hyundai Electronics Industries Co., Ltd.
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Park Sung-kye
Hyundai Electronics Industries Co. Ltd.
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Kim J‐m
Department Of Manufacturing Science Graduate School Of Engineering Osaka University
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Kim Jong-min
Materials & Devices Lab. Samsung Advanced Institute Of Technology
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Son J‐h
Hyundai Electronics Industries Co. Ltd.
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KANG Dae-Gwan
Hyundal Micro Electronics Co., Ltd.
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Kim Jong-Min
Hyundai Electronics Industries Co., Ltd., 1, Hyangjeong-dong, Hungduk-gu, Cheongju, 361-480, Korea
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Son Jeong-Hwan
Hyundai Electronics Industries Co., Ltd., 1, Hyangjeong-dong, Hungduk-gu, Cheongju, 361-480, Korea
著作論文
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
- Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application
- New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge