Son J‐h | Hyundai Electronics Industries Co. Ltd.

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著作論文

Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices

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