Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length

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概要

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• We have found that RNWE and sub-threshold hump characteristics strongly depend on the gate length and the hump get strongest at the gate length at which the threshold voltage is highest. We can explain it by the two effects below. First, as the gate-length gets shorter, the effective boron concentration at channel gets higher by halo and TED. Second, the boron depletion near STI gets higher at short gate-length than at long gate-length. It is because the boron depletion or pile-up is enhanced by TED due to S/D implant damage (interstitial). These two effects both results in the stronger RNWE and threshold hump at short gate-length than at the long gate-length.

• 社団法人電子情報通信学会の論文
• 1999-07-23

著者

• LEE Young-Jong

  LG Semicon.,Ltd.

• Jung J‐w

  Hanyang Univ. Seoul Kor

• Lee Kyung-ho

  Lg Semicon Co. Ltd.

• Lee Y‐j

  Samsung Electronics Co. Ltd. Kyunggi‐do Kor

• Son Jeong-hwan

  Hyundai Electronics Industries Co. Ltd.

• Lee Young-jong

  Lg Semicon. Ltd.

• Lee Young-jong

  Advanced Technology Laboratory Lg Semicon Co. Ltd.

• Cho W‐j

  Lg Semicon Co. Ltd.

• Cho Won-ju

  Lg Semicon Co. Ltd.

• Jung Jong-wan

  Hyundai Electronics Industries Co. Ltd.

• JUNG Jong-Wan

  LG Semicon Co., Ltd.

• SON Jeong-Hwan

  LG Semicon Co., Ltd.

• Lee Young-jong

  Advanced Technology Laboratory. Lg Semicon Co.

• Son J‐h

  Hyundai Electronics Industries Co. Ltd.

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