Effects of Oxidation Ambient and Low Temperature Post Oxidation Anneal on the Silicon/Oxide Interface Structure and the Electrical Properties of the Thin Gate Oxide

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Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Effects of Oxidation Ambient and Low Temperature Post Oxidation Anneal on the Silicon/Oxide Interface Structure and the Electrical Properties of the Thin Gate Oxide
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