Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-05-15

著者

• Hwang Hyunsang

  Gwangju Inst. Sci. And Technol. Gwangju Kor

• Ahn Chang-Geun

  Nano Bio-electric Devices Team, IT Convergence & Components Laboratory

• Im Kiju

  Nano Bio-electric Devices Team, IT Convergence & Components Laboratory

• Yang Jong-Heon

  Nano Bio-electric Devices Team, IT Convergence & Components Laboratory

• LEE Seongjae

  Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications

• CHO Won-Ju

  Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division,

• OH Jihun

  Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division,

• Cho Won-ju

  Electronics Materials Kwangwoon University

• Ahn C‐g

  Electronics And Telecommunications Res. Inst. Daejon Kor

• Ahn Chang-geun

  Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology

• Cho W‐j

  Lg Semicon Co. Ltd.

• Cho W‐j

  Electronics Materials Kwangwoon University

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