SOI-Based Nanoscale CMOS Device Technology

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2006-06-26

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3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
A two-layer stacked polycrystalline silicon thin film transistor complementary metal oxide semiconductor inverters using laser crystallized channel with high-k and metal gate on Si (Special issue: Solid state devices and materials)
Fabrication of Two-Layer stacked Poly-Si TFT CMOS Inverters Using Laser Crystallized channel with metal gate on Si Substrate
SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
SOI-Based Nanoscale CMOS Device Technology
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
Ultra-Shallow Junction Formation using Novel Plasma Doping Technology beyond 50nm MOS Devices
Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In_2O_3 Nano-Particles Embedded in Polyimide Insulator
Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
1.55 μm Gain in a Short Er^ -doped Zirconium Fluoride Glass Fiber
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Low temperature Poly-Si TFT nonvolatile memory devices with In_2O_3 nano-particles embedded in polyimide
Effects of Segregated Ge on Electrical Properties of SiO_2/SiGe Interface
Size and Interface State Dependence of the Luminescence Properties Si Nanocrystals
A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-$k$ and Metal Gate on Si
Speed Enhancement of WSi2 Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer
Fabrication of High Performance Ion-Sensitive Field-Effect Transistors Using an Engineered Sensing Membrane for Bio-Sensor Application
Channel Recessed One Transistor Dynamic Random Access Memory with SiO2/Si3N4/SiO2 Gate Dielectric
Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers
Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices
Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing
Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications
Fabrication of Nonvolatile Nano Floating Gate Memory with Self-Assembled Metal-Oxide Nano Particles Embedded in Polyimide
Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO2 Dielectrics
Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
Biomimetic Trehalose Biosensor Using Gustatory Receptor (Gr5a) Expressed in Drosophila Cells and Ion-Sensitive Field-Effect Transistor
Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO2/HfO2 or Al2O3/HfO2 Stacks for Nonvolatile Memories
Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al
Comparative Study of Device Performance and Reliability in Amorphous InGaZnO Thin-Film Transistors with Various High-k Gate Dielectrics
Biomimetic Trehalose Biosensor Using Gustatory Receptor (Gr5a) Expressed in Drosophila Cells and Ion-Sensitive Field-Effect Transistor (Special Issue : Solid State Devices and Materials)
Enhanced Sensing Properties of Fully Depleted Silicon-on-Insulator-Based Extended-Gate Field-Effect Transistor with Dual-Gate Operation

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