Enhanced Sensing Properties of Fully Depleted Silicon-on-Insulator-Based Extended-Gate Field-Effect Transistor with Dual-Gate Operation
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概要
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Fully depleted (FD) silicon-on-insulator (SOI)-based SnO<inf>2</inf>extended-gate field-effect transistors (EGFETs) beyond the Nernstian limit of 59 mV/pH were realized by using the dual-gate (DG) operation. The thickness of buried oxide (BOX) of SOI-MOSFETs was adjusted to magnify the capacitive coupling effect between top and bottom gate oxides in DG operation. As a result, the separate SOI-MOSFETs with 750-nm-thick and 200-nm-thick buried oxide (BOX) showed pH sensitivities of 2037.1 and 554.2 mV/pH, respectively, far beyond the Nernstian limit of 59 mV/pH. Also, better stability characteristics, such as the hysteresis phenomenon and drift effect, are achieved from DG operation.
- 2013-12-25
著者
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Bae Tae-Eon
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
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