3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

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• High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. Considerably uniform silicon grains with (111) preferential crystal orientation were obtained by the laser annealing. Sub-threshold swings of fabricated NMOS at lower layer and PMOS at upper layer TFTs were 78 mV/dec. and 86 mV/dec., respectively. The field effect mobility of NMOS arid PMOS TFTs is 42.5 cm^2/V・s and 76 cm^2/V・s, respectively. Also, the on/off current ratio of both TFTs was larger than 10^7. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

• 2007-06-18

著者

• Lee Woo-hyun

  Electronics Materials Kwangwoon University

• Lee Woo-Hyun

  Department of Electronic Materials Engineering, Kwangwoon University

• Oh Soon-Young

  Nano Bio-electric Devices Team, IT Convergence & Components Laboratory, ETRI

• Ahn hang-Geun

  Nano Bio-electric Devices Team, IT Convergence & Components Laboratory, ETRI

• Cho Won-Ju

  Department of Electronic Materials Engineering, Kwangwoon University

• Cho Won-ju

  Electronics Materials Kwangwoon University

• Cho W‐j

  Lg Semicon Co. Ltd.

• Cho Won-ju

  Department Of Electronic Material Engineering Kwangwoon University

• Ahn Hang-geun

  Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri

• Ahn Chang-geun

  Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri

• Oh Soon

  Dept. Of Electronics Engineering Chungnam National University

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