Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
スポンサーリンク
概要
- 論文の詳細を見る
We fabricated the floating gate for silicon-on-insulator (SOI) nonvolatile memory devices with In_2O_3 nano-particles embedded in polyimide insulator. Self-assembled In_2O_3 nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In_2O_3 nano-particles were 7 nm and 6×10^<11>cm^<-2>, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In_2O_3 nano-particles. And a memory window measured about 1V at initial status.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
-
KIM Eun
Quantun-Function Spinics Lab. and Dept. of Physics, Hanyang University
-
Kim Seon
Hanyang Univ. Seoul Kor
-
Kim Eun
Quantum-function Spinics Lab. Department Of Physics Hanyang University
-
Kim Seon
Quantum-function Spinics Lab. Department Of Physics Hanyang University
-
Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University
-
Cho Won-ju
Electronics Materials Kwangwoon University
-
KIM Young-Ho
Department of Mechanical Engineering, Hanyang University
-
Kim Young-ho
Department Of Materials Science And Engineering Hanyang University
-
Kim Eun
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
-
Lee Tae
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
-
LEE Dong
Quantum-Function Spinics Lab. and Department of Physics, Hanyang University
-
KOO Hyun-Mo
Department of Electronic Material Engineering, Kwangwoon University
-
Kim Seon
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
-
Koo Hyun-mo
Department Of Electronic Material Engineering Kwangwoon University
-
Lee Dong
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
-
Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
-
Kim Young-ho
Department Of Materials Engineering Hanyang University
-
Kim Young-Ho
Department of Advanced Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
-
Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
-
Lee Dong
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
関連論文
- Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Fabrication of Two-Layer stacked Poly-Si TFT CMOS Inverters Using Laser Crystallized channel with metal gate on Si Substrate
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Ultra-Shallow Junction Formation using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing
- A Study on the Spray Structure of High Pressure Gasoline Injection
- Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In_2O_3 Nano-Particles Embedded in Polyimide Insulator
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications (Special issue: Solid state devices and materials)
- Low temperature Poly-Si TFT nonvolatile memory devices with In_2O_3 nano-particles embedded in polyimide
- Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix
- Contact Resistance of the Chip-on-Glass Bonded 48Sn-52In Solder Joint
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- Growth and Characterization of High Quality $a$-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique
- Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- Pt/Ti Thin Film Adhesion on SiN_x/Si Substrates
- A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-$k$ and Metal Gate on Si
- Endoscopic and histopathological characteristics suggesting the presence of gastric mucosal high grade neoplasia foci in cases initially diagnosed as gastric mucosal low grade neoplasia by forceps biopsy in Korea
- Growth of ZnTe:O Thin Films by Oxygen-Plasma-Assisted Pulsed Laser Deposition (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Electrical and Optical Properties of p-Type InMnP:Zn for Nano-spintronics
- Study on Defect States in GaN Epilayer Induced by Irradiation of High-Energy Electrons
- Speed Enhancement of WSi2 Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer
- Fabrication of High Performance Ion-Sensitive Field-Effect Transistors Using an Engineered Sensing Membrane for Bio-Sensor Application
- Channel Recessed One Transistor Dynamic Random Access Memory with SiO2/Si3N4/SiO2 Gate Dielectric
- Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications
- Electrical Characterization of Nano-floating Gate Capacitor with Silicon Carbide Nano Particles
- Fabrication of Nonvolatile Nano Floating Gate Memory with Self-Assembled Metal-Oxide Nano Particles Embedded in Polyimide
- Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO2 Dielectrics
- Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix
- Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
- Biomimetic Trehalose Biosensor Using Gustatory Receptor (Gr5a) Expressed in Drosophila Cells and Ion-Sensitive Field-Effect Transistor
- Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO2/HfO2 or Al2O3/HfO2 Stacks for Nonvolatile Memories
- Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al
- Comparative Study of Device Performance and Reliability in Amorphous InGaZnO Thin-Film Transistors with Various High-k Gate Dielectrics
- Biomimetic Trehalose Biosensor Using Gustatory Receptor (Gr5a) Expressed in Drosophila Cells and Ion-Sensitive Field-Effect Transistor (Special Issue : Solid State Devices and Materials)
- Enhanced Sensing Properties of Fully Depleted Silicon-on-Insulator-Based Extended-Gate Field-Effect Transistor with Dual-Gate Operation