Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
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概要
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Deep-level transient spectroscopy (DLTS) was performed to investigate the energy levels introduced inside quantum wells in the active region of a quantum cascade laser (QCL) structure. To form a simple active region, we prepared samples with GaAs/AlGaAs three and single-quantum-well (QW) structures. At least two QW levels were observed from the DLTS spectra for a three-QW structure and their activation energies were calculated to be approximaely 0.11–0.13 eV for QW1 and 0.20–0.22 eV for QW2. The positions of energy levels in multi quantum wells were slightly shifted upward by the applied electric field. In the case of a single QW, an activation energy of 0.08 eV was obtained.
- 2006-06-30
著者
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Kim Eun
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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SONG Jin
Nano-Device Research Center, Korea Institute of Science and Technology
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PARK Ji
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University
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HAN Il
Nano-Device Research Center, Korea Institute of Science and Technology
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Kim Jin
Quantun-function Spinics Lab. And Dept. Of Physics Hanyang University
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Park Ji
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Han Il
Nano-Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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