Electrical and Optical Properties of p-Type InMnP:Zn for Nano-spintronics
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概要
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We studied the electrical and optical properties of defect states and Mn-related clusters of p-type InMnP:Zn samples annealed at 450 and 600 °C by capacitance–voltage ($C$–$V$), deep-level transient spectroscopy (DLTS) and photoluminescence (PL) measurements. Mn ion implantation on InP:Zn to obtain the ferromagnetic property can also generate various defects. We were able to find seven different DLTS signals named H2, H3, H4, H6, H8, H10, and E2. In these signals, the origins of H6 and H8 signals appear to be a Mn-state and Mn-related cluster and their activation energies are 0.32 and 0.72 eV, respectively. Finally, we confirmed that the ferromagnetic properties of InMnP:Zn are affected by this Mn-related level and the crystallinity of base semiconductor material.
- 2008-06-25
著者
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Shon Yoon
Quantum Functional Semiconductor Research Center Dongguk University
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Lee Yun-il
Quantun-function Spinics Lab. And Dept. Of Physics Hanyang University
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Kim Jin
Quantun-function Spinics Lab. And Dept. Of Physics Hanyang University
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Shon Yoon
Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
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Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Ha Limkyung
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Lee Yun-Il
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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