Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix
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概要
- 論文の詳細を見る
Metal oxide nanoparticles are embedded in a polyimide matrix by a chemical reaction between a metal thin film and polyamic acid. The electrical characteristics of ZnO nanoparticles are investigated with a floating gate capacitor structure by capacitance–voltage ($C$–$V$) measurement. The $C$–$V$ characteristics resulting from metal deposition modulation and the existence of a SiO2 layer are also investigated. As a result, ZnO particles with a SiO2 tunneling barrier show a $C$–$V$ hysteresis voltage gap of 2.8 V at 300 K. ZnO particles directly located on a Si substrate show a $C$–$V$ hysteresis width of 1.5 V at 80 K. This electrical characterization is discussed for applications to nano floating-gate memory devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-15
著者
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Kim Eun
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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Lee Dong
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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KIM Jae-Hoon
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University
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Kim Gun
Department Of Life Sciences Graduate School Of Arts And Sciences The University Of Tokyo
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Kim Young-Ho
Department of Advanced Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Young-Ho
Department of Materials Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Jae-Hoon
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Lee Dong
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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