Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications

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概要

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• We fabricated the nano-floating gate memory (NFGM) devices on the polycrystalline silicon (poly-Si) films crystallized by excimer laser annealing (ELA) method for thin-film transistor liquid-crystal display (TFT-LCD) with a new integration technology called digital memory on glass (DMOG). The In2O3 nano-dots were formed in polyimide gate insulating layers at low temperature as the charge storages of nonvolatile memory for DMOG applications. The memory window of low temperature poly-Si TFT nonvolatile memory with In2O3 nano-dots embedded in polyimide was larger than 3.2 V and the memory characteristics were considerably improved by 3% hydrogen diluted N2 ambient annealing.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Kim Eun

  Quantum-function Spinics Lab. And Department Of Physics Hanyang University

• Kim Seon

  Quantum-function Spinics Lab. And Department Of Physics Hanyang University

• Koo Hyun-mo

  Department Of Electronic Material Engineering Kwangwoon University

• Lee Dong

  Quantum-function Spinics Lab. And Department Of Physics Hanyang University

• Cho Won-ju

  Department Of Electronic Material Engineering Kwangwoon University

• Jung Jongwan

  Department Of Nano Science And Technology Sejong University

• Kim Seon

  Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea

• Kim Eun

  Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea

• Koo Hyun-Mo

  Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

• Lee Dong

  Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea

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