Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al
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概要
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The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59 mV/pH, which is the maximum value in electrochemical potential according to the Nernst equation. Here, the silicon-on-insulator (SOI) based dual-gate (DG) ISFETs with SiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>(OA) using solution based process was evaluated to obtain higher pH sensitivity. The device exhibited a significantly enhanced pH sensitivity of 407.3 mV/pH for the DG operation by capacitive coupling between top and bottom gate oxide. Therefore, the SOI-based ISFETs using solution process and the DG monitoring method are very promising to biological sensors application in terms of high performance and large process area.
- 2013-06-25
著者
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Lee Se-won
Department Of Dermatology And Institute Of Hair And Cosmetic Medicine Yonsei University Wonju Colleg
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Jang Hyun-June
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
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Bae Tae-Eon
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
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Lee Se-Won
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
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